kst-2108-000 1 DP030S pnp silicon transistor features extremely low collector-to-emitter saturation voltage ( v ce (sat) = -0.15v typ. @i c /i b =-100ma/-10ma) suitable for low voltage large current drivers complementary pair with dn030s switching application ordering information type no. marking package code DP030S p01 sot-23f outline dimensions unit : mm s s e e m m i i c c o o n n d d u u c c t t o o r r pin connections 1. base 2. emitter 3. collector 0.4 0.05 0~0.1 3 1 2 1.90 bsc 2.9 0.1 0.15 0.05 2.4 0.1 0.9 0.1 1.6 0.1
kst-2108-000 2 DP030S absolute m aximum r atings (ta=25 c) characteristic symbol ratings unit collector-base voltage v cbo -15 v collector-emitter voltage v ceo -12 v emitter-base voltage v ebo -5 v collector current i c -300 ma collector dissipation p c 200 mw junction temperature t j 150 c storage temperature t stg -55~150 c electrical characteristics (ta=25 c) characteristic symbol test condition min. typ. max. unit collector-base breakdown voltage bv cbo i c =-50 m a, i e =0 -15 - - v collector-emitter breakdown voltage bv ceo i c =-1ma, i b =0 -12 - - v emitter-base breakdown voltage bv ebo i e =-50 m a, i c =0 -5 - - v collector cut-off current i cbo v cb =-12v, i e =0 - - -0.1 m a emitter cut-off current i ebo v eb =-5v, i c =0 - - -0.1 m a h fe1 v ce =-1v, i c =-100ma 200 - 450 - dc current gain h fe2 v ce =-1v, i c =-300ma 70 - - - v ce(sat1) i c =-100ma, i b =-10ma - - -0.2 v collector-emitter saturation voltage v ce(sat2) i c =-300ma, i b =-30ma - - -0.5 v be(sat1) i c =-100ma, i b =-10ma - - -1.2 v base-emitter saturation voltage v be(sat2) i c =-300ma, i b =-30ma - - -1.7 v transition frequency f t v ce =-5v, i c =-10ma - 350 - mhz collector output capacitance c ob v cb =-10v, i e =0, f=1mhz - 4 - pf
kst-2108-000 3 DP030S electrical characteristic curves fig. 3 h fe - i c eohhfie fig. 1 p c - t a fig. 5 v ce( sat) - i c fig. 4 i c - v ce fig. 2 i c- v be 1v
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